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For
many years in-depth experience and expertise in ESD
protection design and latch-up from research to industry
- Research
and academia (Ph.D. in ESD-level simulation, device physics, high-voltage ESD protection, more
than 25 peer-reviewed papers, TPC members EOSESD, IRPS, ... )
- Lead
ESD design and project engineers in technology development of
semiconductor IDM's (e.g. Infineon Technologies AG,
Robert Bosch GmbH).
Close cooperation within industrial matrix environment: technology
development,
CAD, technology & product quality & reliability,
product IC design, marketing - Consultants
and service provider in more than 40 cooperation projects with
semiconductor companies world-wide (focus: Japan, Europe, US)
QPX - ESD/Latch-up services for
diverse
IC process technologies
- Mature
to nano-scale CMOS (0.5u ... 45nm)
- High-voltage
CMOS (18-60V)
- Bipolar-CMOS-DMOS
(Smart-Power, 30-100V)
and DMOS-CMOS - Bipolar-CMOS including SiGe
- Silicon-On-Insulator
(SOI) advanced CMOS
and high-voltage power - High-Voltage
Common Drain technology
for automotive power applications
QPX - ESD/Latch-up
services for
diverse IC product applications
- Competitive ESD
solutions that match you products specifications (e.g. HBM, MM, CDM,
latch-up, IEC, ISO ...) as well as your time-to-market needs
- CMOS:
standard IOs, over-voltage tolerant IO,
various RF-IOs, mixed-signal, analog, digital - High-voltage
CMOS / BCD: power
management, LCD driver, DCDC/ACDC
converter, high-/low-side switches, diverse automotive
applications …
- System-on-Chip
(SOC)
- System-in-Package
QPX - services for CAD implementation
- Pcell
integration of your ESD library devices
- ESD
/ latch-up EDA tool integration (ongoing)
Special field:
High-Voltage CMOS and Bipolar-CMOS-DMOS
for industrial and automotive products
One
focus of QPX services is on robustness of technologies containing
lateral & vertical DMOS and/or
high-voltage MOS/bipolar transistors with high DC/transient voltage
requirements.
The IC products fabricated in these technologies often have to operate in harsh
environments (e.g. automotives) being exposed to a variety of
EM disturbances and large temperature ranges.
A frequent cause of customer returns of malfunctioning ICs is missing signal
integrity or EOS
failures caused by ESD protection devices. To avoid these kind of
failures the holding voltage of ESD protection device can be increased
above the supply voltage.
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